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amorphous thin film energy storage
Simultaneously achieved high energy storage density and efficiency in sol-gel-derived amorphous Mn-doped SrTiO3 thin films
ST thin films with different microstructure were prepared by a sol-gel method. • Amorphous films has excellent frequency, temperature and bias voltage stability. • Amorphous films show high breakdown strength and energy storage properties. • An ultrahigh U rec of 53.9J/cm 3 with η of 77.2% is obtained in amorphous thin films.
Enhanced energy storage properties of amorphous BiFeO3
Here we demonstrate that the high breakdown strength and high energy storage density can be achieved by constructing BiFeO 3 /Al 2 O 3 ferroelectricity-insulators heterojunction. The breakdown strength, leakage current density and energy storage performance are investigated systematically of the multilayer thin films.
Amorphous/Crystalline Engineering of BaTiO3-Based Thin Films for Energy-Storage
Enhanced energy-storage performance of sol-gel BaZr0.25Ti0.75O3 thin films via phase evolution of amorphous-crystalline structure Doan T. Tran Hien T. Vu H. N. Vu M. Nguyen Materials Science, Engineering
Amorphous-nanocrystalline Lead Titanate Thin Films for Dielectric Energy Storage
Increased energy storage performance is also witnessed in lead-rich lead titanate, Pb 1.1 TiO 3.1 nanocomposite amorphous thin films in an amorphous matrix. 113 These films were prepared using CSD
A new strategy to optimize the energy storage performance of the
Low-temperature amorphous thin films with excellent energy storage properties play a crucial role in silicon-based microelectronic applications. The (1
Ultra-high energy storage density BaTiO3 amorphous thin film
Amorphous films have excellent breakdown strength and energy storage efficiency, and have broad application prospects in dielectric film capacitors. However, its low polarization greatly limits the increase of energy storage density. In this paper, (Ba 0.92-x Bi 0.08 La x)(Ti 0.96-0.5x Ni 0.04+0.5x)O 3 (BBLTN) amorphous
Ultrahigh energy storage and electrocaloric performance achieved in SrTiO3 amorphous thin films
Simultaneously, the amorphous thin films also possess good insulation, resulting in improved energy storage performance. Furthermore, a reversible negative electrocaloric effect (the adiabatic temperature change is about −10.6 K at 393 K and about −4.1 K at 300 K) is also obtained.
Enhanced energy-storage performance of sol-gel BaZr0.25Ti0.75O3 thin films via phase evolution of amorphous
To investigate the existence of the nanocrystal and amorphous phase in the thin films, high-resolution transmission-electron microscopy (HRTEM) and Fast Fourier Transform (FFT) are used. The HRTEM image in Fig. 3 a indicates that nano-scale polar regions with a size of about 2–5 nm were embedded in the amorphous matrix, resulting
Crystals | Free Full-Text | Tunable Phase Structure in
For dielectric energy storage materials, high polarization and high breakdown strengths are a long-standing challenge. A modulating crystalline/amorphous phase structure strategy is proposed by Mn
High-entropy enhanced capacitive energy storage
Li, Y. et al. Ultrahigh-energy storage properties of (PbCa)ZrO 3 antiferroelectric thin films via constructing a pyrochlore nanocrystalline structure. ACS Nano 14, 6857–6865 (2020).
Performance optimization of Mg-rich bismuth-magnesium-titanium thin films for energy storage
DOI: 10.1016/j.jeurceramsoc.2019.11.051 Corpus ID: 210232156 Performance optimization of Mg-rich bismuth-magnesium-titanium thin films for energy storage applications @article{Xie2020PerformanceOO, title={Performance optimization of Mg-rich bismuth-magnesium-titanium thin films for energy storage applications}, author={Juan Xie and
Excellent energy storage performance of Mn-doped SrTiO3-BiFeO3 thin films
SrTiO 3-BiFeO 3 thin films were prepared by a sol-gel method. The amorphous & nanocrystalline coexisted structure is modulated for energy storage. • The films show optimized energy density of 65 J/cm 3 and high efficiency of 75%. The mechanism of properties
Reinforced via the insulative boric oxide in the BaTiO3 amorphous
As a result, a high discharge energy storage density of 68.64 J cm −3 and an efficiency of 85% can be achieved in the BaTiO 3-5wt%B 2 O 3 amorphous thin film
Multifunctional electrochromic energy storage devices by chemical cross-linking: impact of a WO3·H2O nanoparticle-embedded chitosan thin film
et al. Multifunctional electrochromic energy storage devices by chemical cross-linking: impact of a WO 3 ·H 2 O nanoparticle-embedded chitosan thin film on amorphous WO 3 films.
Amorphous/Crystalline Engineering of BaTiO 3 -Based Thin Films
Finally, the optimized energy-storage performance is achieved in 0.92BT-0.08BMZ thin films annealed at 600 C, with a large energy density of 55.2 J/cm 3 and a
Enhancing the energy storage density of Bi0.5Na0.5TiO3 thin films by adding an amorphous
The energy storage density of ferroelectric capacitors is mainly determined by their polarization and breakdown strength. In this work, the energy storage performance of BNT thin films was enhanced by introducing an amorphous alumina to construct Al 2 O 3-Bi 0.5 Na 0.5 TiO 3 (AO-BNT) heterojunctions by sol-gel process.
Superior energy storage BaTiO3-based amorphous dielectric film with polymorphic hexagonal and cubic nanostructures
The energy storage density of the dielectric capacitor can be calculated by the area between the P-E loop and the polarization (P) axis [19], [20], [21]. The distributions of polarization and local electric field in the studied thin film were simulated by
Amorphous-nanocrystalline lead titanate thin films for dielectric energy storage
Here, composite thin ・〕ms with nanocrystalline particles in an amorphous matrix were explored to increase the stored energy density of dielectrics. For this purpose, thin ・〕ms of lead-rich lead titanate, Pb. 1.1TiO. 3.1, were fabricated via chemical solution deposition and heat-treated at temperatures ﾂｯ400ﾂｰC.
Pulsed laser–deposited Li2TiO3 thin film electrodes for energy storage | Journal of Solid State Electrochemistry
Li2TiO3 (LTO) is a promising Ti-based material showing interesting electrochemical performance, good structural stability, cost-effectiveness, and non-toxic electrode material for energy storage and conversion. In this work, thin films of LTO have been deposited by the pulsed laser deposition (PLD) technique on Au/Ti/SiO2/textured Si multilayer
Enhanced energy density of flexible asymmetric solid state supercapacitor device fabricated with amorphous thin film
Supercapacitors have recently received immense interest in scientific community, as a complementary technology to batteries, to meet the various requirements for energy usage in practice. Amorphous MnO 2 and CuS thin films are prepared on stainless steel-304 (SS) substrate by chemical bath deposition (CBD) and successive
Realization of High Energy Storage Performance in BaTiO3
Herein, BaTiO 3-Bi(Co 0.5 Zr 0.5)O 3 (BT-BCZ) thin films with an amorphous structure is proposed, which is expected to obtain large ΔP (P max – P r) and energy storage density.
Structure-evolution-designed amorphous oxides for dielectric energy storage
Zhang, L. et al. ALD preparation of high-k HfO 2 thin films with enhanced energy density and efficient electrostatic energy storage. RSC Adv. 7, 8388–8393 (2017). Article ADS CAS Google Scholar
Ultrahigh energy storage and electrocaloric performance achieved in SrTiO 3 amorphous thin films
Here, we present an effective method to achieve high energy storage performance, which is embedding the crystalline polar clusters in amorphous thin films. The large energy density of 65.3 J cm-3
(PDF) Enhanced energy storage properties of amorphous BiFeO3
excellent energy storage density of the thin film is obtained mainly due to the effect of high (1−x)BaZr0.2Ti0.8O3−xBi0.5Na0.5TiO3 ((1−x)BZT−xNBT) amorphous films, researching the
Amorphous-Nanocrystalline Lead Titanate Thin Films for Dielectric Energy Storage
Amorphous-Nanocrystalline Lead Titanate Thin Films for Dielectric Energy Storage Author(s): E.K. Michael and S.Trolier-McKinstry Source: JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, Volume: 122, Issue: 1424, Pages: 250-255, DOI: 10.2109/jcersj2.122.
First-principles analysis of electrochemical hydrogen storage behavior for hydrogenated amorphous silicon thin film
Herein, the hydrogenated amorphous silicon (a-Si:H) thin film electrodes are prepared by radio frequency sputtering followed by ex-situ hydrogenation. The electrochemical properties of a-Si:H electrodes are tested experimentally, and the electrochemical hydrogen storage behaviors of a-Si:H electrodes are analyzed by first
Reinforced via the insulative boric oxide in the BaTiO3 amorphous thin film with high energy storage
Amorphous films have excellent breakdown strength and energy storage efficiency, and have broad application prospects in dielectric film capacitors. However, its low polarization greatly limits the increase of energy storage density. In this paper, (Ba 0.92-x Bi 0.08 La x)(Ti 0.96-0.5x Ni 0.04+0.5x)O 3 (BBLTN) amorphous
Evolution of polarization crystallites in 0.92BaTiO3-0.08Bi(Ni0.5Zr0.5)O3 microcrystal-amorphous composite thin film with high energy storage
As a result, a high discharge energy storage density of 68.64 J cm −3 and an efficiency of 85% can be achieved in the BaTiO 3-5wt%B 2 O 3 amorphous thin film at 7.3 MV cm −1, together with excellent thermal stability (20–200 C) and cyclic stability (up to
[PDF] Amorphous-nanocrystalline lead titanate thin films for dielectric energy storage
Many high permittivity crystalline dielectric thin films have a low breakdown strength, which is unfavorable for dielectric energy storage devices. In contrast, many amorphous linear dielectrics have much lower permittivities but larger breakdown strengths. Here, composite thin films with nanocrystalline particles in an amorphous matrix were
Ultra-thin multilayer films for enhanced energy storage performance
Ultimately, in the ultra-thin N24 film, with each layer having a thickness of 6.7 nm, we achieved a remarkable enhancement of energy storage performance, with
Performance optimization of Mg-rich bismuth-magnesium-titanium thin films for energy storage applications
Due to advances in electronic device integration, miniaturization, and performance requirements, dielectric materials with a high energy storage density are required. Here, new BiMg 0.5 Ti 0.5 O 3 lead-free energy storage thin films with excess Mg (i.e., nominal BiMg y Ti 0.5 O 3, with y = 0.50-0.62) were deposited on Pt/Ti/SiO 2 /Si
Reinforced via the insulative boric oxide in the BaTiO3 amorphous thin film with high energy storage
As a result, a high discharge energy storage density of 68.64 J cm⁻³ and an efficiency of 85% can be achieved in the BaTiO3-5wt%B2O3 amorphous thin film at 7.3 MV cm⁻¹, together with
High-performance piezoelectric energy harvesting in amorphous perovskite thin films
Herein, we introduce flexible amorphous thin-film energy harvesters based on perovskite CaCu3Ti4O12 (CCTO) thin films on a plastic substrate for highly competitive electromechanical energy
A new strategy to optimize the energy storage performance of the amorphous Sr0.925Bi0.05TiO3-based thin films
In recent years, the increasing prominence of energy shortages and environmental pollution has led to the heightened attention towards research on green renewable energy. A variety of new energy sources have been gradually explored, for example, solar energy [], wind energy [], biomass energy [], nuclear energy [] and so
Ultra-high energy storage density BaTiO3 amorphous thin film via
Amorphous films have excellent breakdown strength and energy storage efficiency, and have broad application prospects in dielectric film capacitors.
Superior energy storage BaTiO3-based amorphous dielectric film
Enhanced energy-storage performance of sol-gel BaZr0.25Ti0.75O3 thin films via phase evolution of amorphous-crystalline structure Doan T. Tran Hien T. Vu H. N. Vu M. Nguyen Materials Science, Engineering
Achieving ultrahigh energy storage performance in
Pure perovskite Bi (Mg0.5Tix)O3 (reviated as BMTx) thin films are successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol–gel method, where the excess TiO2 with an amorphous structure is designed to
